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<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.CUBECube]] [[image:cad-ico.png | link=Building Geometrical Constructions in CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:postatic-ico.png | link=EM.IlluminaFerma]] [[image:staticplanar-ico.png | link=EM.FermaPicasso]] [[image:planarmetal-ico.png | link=EM.PicassoLibera]] [[image:metalpo-ico.png | link=EM.LiberaIllumina]] </td>
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[[Image:Back_icon.png|40px30px]] '''[[EM.Cube | Back to EM.Cube Main Page]]'''
== Assigning Material Properties to the Physical Structure ==
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<td> [[Image:FDTD5E.png|thumb|left|300px320px|The Add New Material dialog.]]
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<td> [[Image:FDTD5F.png|thumb|left|600px720px|A new custom material entry in the Materials List.]] </td>
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If your physical structure has two or more sources, but you have not defined any ports, all the lumped sources excite the structure simultaneously. However, when you assign N ports to the sources, then you have a multiport structure that is characterized by an N×N scattering matrix, an N×N impedance matrix, and an N×N admittance matrix. To calculate these matrices, [[EM.Cube]] uses a binary excitation scheme in conjunction with the principle of linear superposition. In this binary scheme, the structure is analyzed N times. Each time one of the N port-assigned sources is excited, and all the other port-assigned sources are turned off. The N solution vectors that are generated through the N binary excitation analyses are finally superposed to produce the actual solution to the problem. However, in this process, [[EM.Cube]] also calculates all the port characteristics.
For example, [[EM.Tempo]] primarily computes the S-parameters. For , which relates the computation of incident and reflected power waves at the S-parameters in [[EM.Tempo]], the source associated with each port is excited separately with all the other ports turned off. Due to the existence of internal source resistances, tuning the other sources off is indeed equivalent to terminating the other ports in their characteristics impedances (matched ports). When the jth port is excited, all the S<sub>ij</sub> parameters are calculated together based on the following definitionstructure as follows:
:<math> \mathbf{ [b] = [S][a] } </math> where the incident and reflected power waves a<sub>i</sub> and b<sub>i</sub> at port i are related to the voltage V<sub>i</sub> across port i and the current I<sub>i</sub> flowing into port i in the following manner: :<math> a_i = \frac{V_i + Z_i I_i}{2\sqrt{|Re(Z_i)|}}, \quad\quad b_i = \frac{V_i - Z_i^* I_i}{2\sqrt{|Re(Z_i)|}} </math> and Z<sub>i</sub> is the reference or characteristic impedance of port i. For the computation of the S-parameters in [[EM.Tempo]], the source associated with each port is excited separately with all the other ports turned off. Due to the existence of internal source resistances, tuning the other sources off is indeed equivalent to terminating the other ports in their characteristics impedances (matched ports). When the jth port is excited, all the S<sub>ij</sub> parameters are calculated together based on the following definition: :<math> S_{ij} = \sqrt{\frac{|Re(Z_i)|}{|Re(Z_j)|}} \cdot \frac{V_j - Z_j^*I_j}{V_i+Z_i I_i} </math>
:<math>\mathbf{ [Z] = [\sqrt{Z_0}] \cdot ([U]+[S]) \cdot ([U]-[S])^{-1} \cdot [\sqrt{Z_0}] }</math>
== Calculating Scattering Parameters Using Prony's Method ==
[[EM.Picasso]] provides a special source type called '''[[Glossary of EMGlossary_of_EM.Cube's Excitation Sourcess_Materials,_Sources,_Devices_&_Other_Physical_Object_Types#Scattering Wave Port Scattering_Wave_Port | Scattering Wave Port]]''' that is specifically intended for computing the S-parameters of planar structures. This is done by analyzing the current distribution patterns on the port transmission lines. The discontinuity at the end of a port line (junction region) gives rise to a standing wave pattern in the line's current distribution. From the location of the current minima and maxima and their relative levels, one can determine the reflection coefficient at the discontinuity, <i>i.e.</i> the S<sub>11</sub> parameter. A more rigorous technique is Prony’s method, which is used for exponential approximation of functions. A complex function f(x) can be expanded as a sum of complex exponentials in the following form:
:<math> f(x) \approx \sum_{n=1}^N c_i e^{-j\gamma_i x} </math>
You couple two or more sources using the '''Port Definition Dialog'''. To do so, you need to change the default port assignments. First, delete all the ports that are to be coupled from the Port List of the dialog. Then, define a new port by clicking the '''Edit''' button of the dialog. This opens up the Add Port dialog, which consists of two tables: '''Available''' sources on the left and '''Associated''' sources on the right. A right arrow {{key|-->}} button and a left arrow {{key|<--}} button let you move the sources freely between these two tables. You will see in the "Available" table a list of all the sources that you deleted earlier. You may even see more available sources. Select all the sources that you want to couple and move them to the "Associated" table on the right. You can make multiple selections using the keyboard's {{key|Shift}} and {{key|Ctrl}} keys. Closing the Add Port dialog returns you to the Port Definition dialog, where you will now see the names of all the coupled sources next to the name of the newly added port.
{{Note|It When not using [[EM.Cube]]'s wizards, it is your the user's responsibility to set up coupled ports and coupled transmission lines properly. For example, to excite the desirable odd mode of a coplanar waveguide (CPW), you need to create two rectangular slots parallel to and aligned with each other and place two gap sources on them with the same offsets and opposite polarities. To excite the even mode of the CPW, you use the same polarity for the two collocated gap sources. Whether you define a coupled port for the CPW or not, the right definition of sources will excite the proper mode. The couple ports are needed only for correct calculation of the port characteristics.}}
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== Modeling Finite-Sized Source Arrays ==
You scan can define arrays of sources on arrays of legitimate host objects. If your project in [[EM.Tempo]] has a line array object, you can define a lumped source array associated with it. If your project in [[EM.Picasso]] has an array of rectangle strips or an array of PEC vertical via objects, you can define and place a gap array or an array of probe sources on them, respectively. Similarly, if your project in [[EM.Libera]] has a line array object, a polyline array object, or an array of long, narrow rectangle strips, you can define and place a line gap array or a strip gap array on them, respectively. In all of these cases, the legitimate array objects will also be listed as an eligible object for source placement. A lumped or gap source will then be placed on each element of the array. All the individual sources will have identical direction and offset.
You can prescribe certain amplitude and/or phase distribution over the array of gap or probe sources. By default, all the gap or probe sources have identical amplitudes of 1V (or 1A for the slot case) and zero phase. The available amplitude distributions to choose from include '''Uniform''', '''Binomial''' and '''Chebyshev''' and '''Date File'''. In the Chebyshev case, you need to set a value for minimum side lobe level ('''SLL''') in dB. You can also define '''Phase Progression''' in degrees along all three principal axes. You can view the amplitude and phase of individual sources by right clicking on the top '''Sources''' item in the Navigation Tree and selecting '''Show Source Label''' from the contextual menu.
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<td> [[Image:PMOM49.png|thumb|left|480px|Defining gap sources on an array of rectangle strip objects.]] </td><td> [[Image:PMOM49_2nd.png|thumb|left|480px|Defining gap sources on an array of rectangle strip objects with a Chebyshev amplitude distribution.]] </td>
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<b> The Nonlinear Diode Device </b>
A diode is a rectifying device. The time-domain relationship between the voltage and current of a diode is given by the nonlinear equation:
Once a mesh is generated, it stays in the memory until the structure is changed or the mesh density or other settings are modified. Every time you view mesh, the one in the memory is displayed. You can force [[EM.Cube]] to create a new mesh from the ground up by selecting the menu item '''Simulate → Discretization → Regenerate Mesh''' or by right clicking on the '''Mesh''' item in the "Discretization" section of the navigation tree and selecting '''Regenerate''' from the contextual menu.
To customizing customize the mesh of your physical structure or change some of the mesh settings in each [[EM.Cube]] module, follow the steps below:
# Click the '''Mesh Settings''' [[File:mesh_settings.png]] button of the Simulate Toolbar.
# The Mesh Settings dialog of the currently c=active [[EM.Cube]] module opens up.
# From the '''Host''' drop-down list, select a line object. Note that only line parallel to one of the three principal axes are listed.
# By default, the lumped source is placed at the midpoint of the host line object. You can modify the '''Offset''' parameter, which is measured from the start point of the line and is always positive.
# Click the OK button of the dialog to return to the project workspace.
You can change the mesh algorithm from the dropdown list labeled '''Mesh Type''' if there is more than one option. You can also enter a different value for '''Mesh Density''' in cells per effective wavelength (λ<sub>eff</sub>). For each value of mesh density, the dialog also shows the average "Cell Edge Length" in the free space.
== Adding Fixed Grid Points to the Adaptive Yee The Triangular Surface Mesh Generator ==
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<td> [[Image:FDTD36PO2.png|thumb|left420px|480px|A user-defined fixed grid point in an FDTD meshTwo ellipsoids of different compositions.]] </td>
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<td> [[Image:FDTD38PO3.png|thumb|left420px|480px|Adding a new fixed grid point in EM.Tempo's fixed grid points settings dialog.]] </td></tr><tr><td> [[Image:FDTD39.png|thumb|left|480px|The "Add Fixed Grid Point" dialogTrinagular surface mesh of the two ellipsoids.]] </td>
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Surface mesh generation in [[EM.Cube]] is a two-step process. First, a tessellated version of an object in your project workspace is created. Then, the tessellated object undergoes a surface re-meshing to generate regularized triangular cells. This process is fairly straightforward in the case of flat planar structures. For curved surfaces and curved solid objects, the quality of the initial tessellation of the object is very important and directly affects the quality of the final surface mesh. You can access some additional mesh parameters by clicking the {{key|Tessellation Options}} button of the Mesh Settings dialog. In the Tessellation Options dialog, you can change '''Curvature Angle Tolerance''' expressed in degrees, which as a default value of 15°. This parameter can affect the shape of the mesh especially in the case of solid CAD objects. It determines the apex angle of the triangular cells of the primary tessellation mesh which is generated initially before cell regularization. Lower values of the angle tolerance result in a less smooth and more pointed mesh of curved surface like a sphere.
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<td> [[Image:Tempo L1 Fig11PROP20B.png|thumb|left400px|360px|The XY mesh grid planeThree building objects with different basic and composite shapes in EM.Terrano.]] </td><td> [[Image:Tempo L1 Fig12prop_manual-29A.png|thumb|left|360px320px|The YZ mesh grid planeTessellation Options dialog.]] </td>
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<td> [[Image:FDTD35(1)PROP20C.png|thumb|left|480px360px|The grid cursor on default mesh of the XY grid plane three building objects in EM.Terrano with an edge length of 100m and its grid coordinates (I, J, K) displayed on the status bara curvature angle tolerance of 45°.]]</td><td> [[Image:PROP20D.png|thumb|360px|The refined mesh of the three building objects in EM.Terrano with an edge length of 10m and a curvature angle tolerance of 10°.]] </td>
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== Locking the Mesh Density of Object Groups ==
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[[Image:MESH MAN12.png|thumb|left|480px600px|Locking the mesh density in the property dialog of a material group.]]
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[[Image:MESH MAN9.png|thumb|left|640px540px|The geometry of two dielectric spheres with the same material properties but belonging to two different object groups.]]
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[[Image:MESH MAN11.png|thumb|left|640px540px|The FDTD mesh of the two dielectric spheres. The left sphere is meshed using a global density of 20 cells/λ<sub>eff</sub>, while the right sphere is meshed using a locked density of 100 cells/λ<sub>eff</sub>.]]
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[[Image:MESH MAN10.png|thumb|left|640px540px|The top view of the mesh of the two dielectric spheres also showing the XY grid plane.]]
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