|All versions|{{download|http://www.emagtech.com/content/project-file-download-repository|EM.Tempo Lesson 1|[[EM.Cube]] 14.8}} }}
<b>Designing a BJT RF Amplifier with Lumped Elements</b>=== What You Will Learn ===
=== Objective ===In this tutorial you will build an RF amplifier using a high frequency bipolar junction transistor (BJT) with lumped elements. First, you will examine the S-parameter model of the transistor and analyze its DC bias circuit. Then, you will calculate the port characteristics of the amplifier and verify its matching networks. Finally, you will run an AC frequency sweep analysis of the amplifier to characterize its voltage and gain performance.
In this tutorial, you will build an RF amplifier using a high frequency bipolar junction transistor (BJT) with lumped elements. First, you will examine the S-parameter model of the transistor and analyze its DC bias circuit. Then, you calculate the port characteristics of the amplifier and verify its matching network. Finally, you will run an AC frequency sweep analysis of the amplifier to find its voltage and gain performance. == Examining the High Frequency BJT Model==
High frequency transistors are typically characterized by their S-[[parameters]]. The manufacturer data sheets of RF transistors usually contains tables of measured S-parameter data for various DC bias operating points over a certain range of frequencies. [[RF.Spice]] has a large number of RF bipolar junction transistor (BJT) models with measured S-parameter tables for different combinations of collector-emitter voltages (VCE) and collector currents (IC). Most of [[RF.Spice]]'s RF BJT devices also have counterpart standard BJT model that can be used for DC operating point analysis. The figures below shows the property dialog of the standard BJT model of BFG193 next to the property dialog of the RF BJT model of BFG193 measured at VCE = 10V and IC = 10mA. You will use this transistor for the amplifier design of this tutorial lesson.
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[[File:RF112.png|thumb|440px|left|The property dialog of the standard BFG193 BJT model.]]
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[[File:RF122.png|thumb|400px|left|The property dialog of the RF BFG193 BJT model measured at VCE = 10V and IC = 10mA.]]
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[[File:RF120.png|thumb|300px|The basic BJT RF circuit.]]