Difference between revisions of "RF Tutorial Lesson 11: Designing a Microstrip MESFET Amplifier"
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− | {{projectinfo|Tutorial| Designing a Microstrip MESFET Amplifier |RF150.png|In this project, | + | {{projectinfo|Tutorial| Designing a Microstrip MESFET Amplifier |RF150.png|In this project, you will build and test a distributed RF amplifier using your own S-parameter-based MESFET model.| |
− | * | + | *RF Amplifier |
− | * | + | *S-Parameter-Based MESFET Model |
− | * | + | *Maximum Gain Design |
− | * | + | *Microstrip Line Segment |
− | * | + | *AC Frequency Sweep |
− | * | + | *Power Gain |
− | |All versions|{{download|http://www.emagtech.com/ | + | |All versions|{{download|http://www.emagtech.com/downloads/ProjectRepo/RFLesson11.zip RF Lesson 11}} }} |
− | + | == What You Will Learn == | |
In this tutorial you will learn how to import an RF FET model from a text file and will build a distributed RF amplifier using a unilateral MESFET along with physical microstrip components for the input and output matching networks. | In this tutorial you will learn how to import an RF FET model from a text file and will build a distributed RF amplifier using a unilateral MESFET along with physical microstrip components for the input and output matching networks. | ||
Line 16: | Line 16: | ||
In Tutorial Lesson 10, you learned how to create a new RF BJT device. For this tutorial lesson, you need to create an RF MESFET device. The measured data for the MESFET device are given below: | In Tutorial Lesson 10, you learned how to create a new RF BJT device. For this tutorial lesson, you need to create an RF MESFET device. The measured data for the MESFET device are given below: | ||
− | + | ||
− | + | ||
{| class="wikitable" | {| class="wikitable" | ||
|- | |- | ||
Line 29: | Line 28: | ||
|- | |- | ||
|} | |} | ||
− | |||
− | + | Open RF.Spice's Device Manager and select "Create New RF Device from S-Parameter Test File..." from its File Menu. Follow the program's prompts step by step and create your new MESFET devices according to the table below: | |
{| class="wikitable" | {| class="wikitable" | ||
Line 41: | Line 39: | ||
|} | |} | ||
− | == Building a Distributed MESFET Amplifier with Microstrip Components== | + | == Building & Testing a Distributed MESFET Amplifier with Microstrip Components== |
− | + | ||
− | + | ||
The following is a list of parts needed for this part of the tutorial lesson: | The following is a list of parts needed for this part of the tutorial lesson: | ||
− | ---- | + | {| border="0" |
− | + | |- | |
− | AC Voltage Source | + | | valign="top"| |
− | + | |- | |
− | + | {| class="wikitable" | |
− | + | |- | |
− | N-Type MESFET: MyMESFET | + | ! scope="col"| Part Name |
− | + | ! scope="col"| Part Type | |
− | + | ! scope="col"| Part Value | |
− | + | |- | |
− | + | ! scope="row"| VS | |
− | + | | AC Voltage Source | |
− | + | | 1V | |
− | + | |- | |
− | - | + | ! scope="row"| NP1 |
+ | | N-Type RF MESFET | ||
+ | | Imported Model: MyMESFET | ||
+ | |- | ||
+ | ! scope="row"| XMS1 | ||
+ | | Microstrip Line | ||
+ | | w = 1.15, h = 0.5, er = 3.4. len = 8.19 | ||
+ | |- | ||
+ | ! scope="row"| XMS2 | ||
+ | | Microstrip Line | ||
+ | | w = 1.15, h = 0.5, er = 3.4. len = 4.57 | ||
+ | |- | ||
+ | ! scope="row"| XMS3 | ||
+ | | Microstrip Line | ||
+ | | w = 1.15, h = 0.5, er = 3.4. len = 2.05 | ||
+ | |- | ||
+ | ! scope="row"| XMS4 | ||
+ | | Microstrip Line | ||
+ | | w = 1.15, h = 0.5, er = 3.4. len = 19.76 | ||
+ | |- | ||
+ | ! scope="row"| RS, RL | ||
+ | | Resistor | ||
+ | | 50 | ||
+ | |} | ||
+ | <table> | ||
+ | <tr> | ||
+ | <td> | ||
+ | [[File:RFTUT11_5.png|thumb|500px|The property dialog of the MESFET device.]] | ||
+ | </td> | ||
+ | </tr> | ||
+ | </table> | ||
The goal of this part is to design a distributed MESFET amplifier with a gain of 11dB at f = 4GHz. From the S-parameter data of the MESFET, we know that it is a unilateral transistor, i.e. s<sub>12</sub> = 0. Moreover, |s<sub>11</sub>| < 1 and |s<sub>22</sub>| < 1. Therefore, the MESFET is unconditionally stable. This reduces the input and output reflection coefficients to: | The goal of this part is to design a distributed MESFET amplifier with a gain of 11dB at f = 4GHz. From the S-parameter data of the MESFET, we know that it is a unilateral transistor, i.e. s<sub>12</sub> = 0. Moreover, |s<sub>11</sub>| < 1 and |s<sub>22</sub>| < 1. Therefore, the MESFET is unconditionally stable. This reduces the input and output reflection coefficients to: | ||
Line 69: | Line 95: | ||
<math> \Gamma_{out} = s_{22} </math> | <math> \Gamma_{out} = s_{22} </math> | ||
− | |||
The conjugate matching conditions at the input and output of the unilateral transistor reduce to: | The conjugate matching conditions at the input and output of the unilateral transistor reduce to: | ||
Line 76: | Line 101: | ||
<math> \Gamma_L = s_{22}^{\ast} </math> | <math> \Gamma_L = s_{22}^{\ast} </math> | ||
− | |||
Furthermore, you have: | Furthermore, you have: | ||
Line 84: | Line 108: | ||
<math> G_{Tmax} = G_S . G_0 . G_L = \frac{1}{1- |s_{11}| ^2} . |S_{21}|^2 . \frac{1}{1- |s_{22}| ^2} = 13.5dB </math> | <math> G_{Tmax} = G_S . G_0 . G_L = \frac{1}{1- |s_{11}| ^2} . |S_{21}|^2 . \frac{1}{1- |s_{22}| ^2} = 13.5dB </math> | ||
− | [[File:RF146.png|thumb|450px|Using RF.Spice's Device | + | [[File:RF146.png|thumb|450px|Using RF.Spice's Device Manager for designing a 50&Omega microstrip line.]] |
− | + | ||
To achieve a gain of 11dB, you have 2.5dB more available gain. So you set G<sub>S</sub> = 2dB and G<sub>L</sub> = 1dB for a total gain of G<sub>T</sub> = 2dB + 8dB + 1dB = 11dB. The complex value of Γ<sub>S</sub> is found on the constant circle G<sub>S</sub> = 2dB, and the complex value of Γ<sub>L</sub> is found on the constant circle G<sub>L</sub> = 1dB, in both cases trying to minimize the distance from the center of the Smith Chart. This requirement yields: | To achieve a gain of 11dB, you have 2.5dB more available gain. So you set G<sub>S</sub> = 2dB and G<sub>L</sub> = 1dB for a total gain of G<sub>T</sub> = 2dB + 8dB + 1dB = 11dB. The complex value of Γ<sub>S</sub> is found on the constant circle G<sub>S</sub> = 2dB, and the complex value of Γ<sub>L</sub> is found on the constant circle G<sub>L</sub> = 1dB, in both cases trying to minimize the distance from the center of the Smith Chart. This requirement yields: | ||
Line 92: | Line 115: | ||
Γ<sub>L</sub> = 0.22 ∠70° | Γ<sub>L</sub> = 0.22 ∠70° | ||
− | + | For your MESFET amplifier, you will use the same input and output matching network types as in Tutorial Lesson 10, consisting of a 50Ω transmission line segment together with a shunt 50Ω Open Stub. | |
− | + | For this project, you will use a thin lossless dielectric substrate of thickness h = 0.5mm and relative permittivity &epsilon<sub>r</sub> = 3.4. A 50Ω microstrip line on this substrate has a width of 1.15mm. At the design frequency of f = 4GHz, the guide wavelength of this microstrip line is λ<sub>g</sub> = 45.74mm. The lengths of the microstrip segments are found to be: | |
− | + | ||
− | The lengths of the microstrip segments are found to be: | + | |
{| class="wikitable" | {| class="wikitable" | ||
Line 112: | Line 133: | ||
|} | |} | ||
− | Place and connect all the parts as shown in the | + | Place and connect all the parts as shown in the figure below. For the shunt stubs, connect the microstrip segments XMS2 and XMS4 in a parallel fashion between the source and load resistors and the ground, respectively. Leave the positive pin of XMS2 and XMS4 open. |
+ | |||
+ | <table> | ||
+ | <tr> | ||
+ | <td> | ||
+ | [[File:RF154.png|thumb|640px|The MESFET Amplifier without the source and load sections for the purpose of network analysis.]] | ||
+ | </td> | ||
+ | </tr> | ||
+ | </table> | ||
+ | |||
+ | Run a Network Analysis Test of this circuit according to the table below: | ||
{| border="0" | {| border="0" | ||
|- | |- | ||
− | | valign=" | + | | valign="top"| |
− | + | ||
|- | |- | ||
+ | {| class="wikitable" | ||
+ | |- | ||
+ | ! scope="row"| Start Frequency | ||
+ | | 3G | ||
+ | |- | ||
+ | ! scope="row"| Stop Frequency | ||
+ | | 5G | ||
+ | |- | ||
+ | ! scope="row"| Steps/Interval | ||
+ | | 10Meg | ||
+ | |- | ||
+ | ! scope="row"| Interval Type | ||
+ | | Linear | ||
+ | |- | ||
+ | ! scope="row"| Parameter Set | ||
+ | | S | ||
+ | |- | ||
+ | ! scope="row"| Graph Type | ||
+ | | Smith or Cartesian (Amplitude Only) with Decibels checked | ||
|} | |} | ||
− | Next, connect the AC voltage source and the source and load resistors and place the source and load ammeters in a similar manner as in the last part of | + | The figure below shows the results for S11, S21, S12 and S22 parameters. Note that since S<sub>12</sub> = 0, its dB-scale plot falls at a very large negative number. Therefore, you need to adjust the scale of the vertical axis. Or you can deselect S12 from the graph's legend and zoom to fit. The insertion gain |s<sub>21</sub>| is almost 11dB as expected from the design. However, the value of the return loss |s<sub>11</sub>| is only -5dB and certainly not very good. This is due to the fact that you had to deliberately introduce a mismatch in the input and output matching networks to achieve the specified gain of 11dB. |
+ | |||
+ | <table> | ||
+ | <tr> | ||
+ | <td> | ||
+ | [[File:RFTUT11_6.png|thumb|750px|left|The graph of magnitude of S11, S21 and S22 parameters of the MESFET amplifier circuit (S12 = 0).]] | ||
+ | </td> | ||
+ | </tr> | ||
+ | </table> | ||
+ | |||
+ | == Running an AC Frequency Sweep to Compute Power Gain == | ||
+ | |||
+ | Next, connect the AC voltage source and the source and load resistors and place two ammeters at the source and load ammeters in a similar manner as in the last part of Tutorial Lesson 10. The figure below shows the circuit with the source, load and ammeters: | ||
+ | |||
+ | <table> | ||
+ | <tr> | ||
+ | <td> | ||
+ | [[File:RF150.png|thumb|640px|The MESFET amplifier with microstrip matching networks at its input and output.]] | ||
+ | </td> | ||
+ | </tr> | ||
+ | </table> | ||
+ | |||
+ | Run an AC Frequency Sweep Test of your amplifier according to the table below: | ||
{| border="0" | {| border="0" | ||
|- | |- | ||
− | | valign=" | + | | valign="top"| |
− | + | ||
|- | |- | ||
+ | {| class="wikitable" | ||
+ | |- | ||
+ | ! scope="row"| Start Frequency | ||
+ | | 3G | ||
+ | |- | ||
+ | ! scope="row"| Stop Frequency | ||
+ | | 5G | ||
+ | |- | ||
+ | ! scope="row"| Steps/Interval | ||
+ | | 10Meg | ||
+ | |- | ||
+ | ! scope="row"| Interval Type | ||
+ | | Linear | ||
+ | |- | ||
+ | ! scope="row"| Preset Graph Plots | ||
+ | | i(iam1), i(iam2) | ||
|} | |} | ||
+ | <table> | ||
+ | <tr> | ||
+ | <td> | ||
+ | [[File:RFTUT11_7.png|thumb|750px|The graph of variation of input source current and output load current as a function of frequency.]] | ||
+ | </td> | ||
+ | </tr> | ||
+ | </table> | ||
+ | |||
+ | Also define a custom output plot called "Power_Gain" for your amplifier using the same definition: G<sub>P</sub> = 20*log10(abs(i(am2)/i(am1))). | ||
+ | |||
+ | {| border="0" | ||
+ | |- | ||
+ | | valign="top"| | ||
+ | |- | ||
+ | {| class="wikitable" | ||
+ | |- | ||
+ | ! scope="row"| Start Frequency | ||
+ | | 3G | ||
+ | |- | ||
+ | ! scope="row"| Stop Frequency | ||
+ | | 5G | ||
+ | |- | ||
+ | ! scope="row"| Steps/Interval | ||
+ | | 10Meg | ||
+ | |- | ||
+ | ! scope="row"| Interval Type | ||
+ | | Linear | ||
+ | |- | ||
+ | ! scope="row"| Preset Graph Plots | ||
+ | | Custom: Power_Gain | ||
+ | |} | ||
+ | |||
+ | |||
+ | The figure below shows the graph of power gain vs. frequency. Using the crosshairs you can read the value of the power gain at 4GHz to be 11.148dB, which agrees well with the value of insertion gain calculated in the previous part. | ||
+ | |||
+ | <table> | ||
+ | <tr> | ||
+ | <td> | ||
+ | [[File:RFTUT11_8.png|thumb|750px|The graph of the power gain of the MESFET amplifier vs. frequency.]] | ||
+ | </td> | ||
+ | </tr> | ||
+ | </table> | ||
<p> </p> | <p> </p> | ||
− | [[Image:Back_icon.png|40px]] '''[[RF.Spice_A/D#RF.Spice_A. | + | [[Image:Back_icon.png|40px]] '''[[RF.Spice_A/D#RF.Spice_A.2FD_Tutorials | Back to RF.Spice A/D Tutorial Gateway]]''' |
Latest revision as of 18:46, 8 November 2016
Contents
What You Will Learn
In this tutorial you will learn how to import an RF FET model from a text file and will build a distributed RF amplifier using a unilateral MESFET along with physical microstrip components for the input and output matching networks.
Importing High Frequency MESFET Model
In Tutorial Lesson 10, you learned how to create a new RF BJT device. For this tutorial lesson, you need to create an RF MESFET device. The measured data for the MESFET device are given below:
f(GHz) | s11 | s21 | s12 | s22 |
---|---|---|---|---|
3.0 | 0.80 ∠ -90 ° | 2.80 ∠ 100 ° | 0 | 0.66 ∠ -50 ° |
4.0 | 0.75 ∠ -120 ° | 2.50 ∠ 80 ° | 0 | 0.60 ∠ -70 ° |
5.0 | 0.71 ∠ -140 ° | 2.30 ∠ 60 ° | 0 | 0.58 ∠ -85 ° |
Open RF.Spice's Device Manager and select "Create New RF Device from S-Parameter Test File..." from its File Menu. Follow the program's prompts step by step and create your new MESFET devices according to the table below:
File Name | Model Name | Symbol Name | Symbol |
---|---|---|---|
MyMESFET.txt | MyMESFET | mesfet_n |
Building & Testing a Distributed MESFET Amplifier with Microstrip Components
The following is a list of parts needed for this part of the tutorial lesson:
Part Name | Part Type | Part Value |
---|---|---|
VS | AC Voltage Source | 1V |
NP1 | N-Type RF MESFET | Imported Model: MyMESFET |
XMS1 | Microstrip Line | w = 1.15, h = 0.5, er = 3.4. len = 8.19 |
XMS2 | Microstrip Line | w = 1.15, h = 0.5, er = 3.4. len = 4.57 |
XMS3 | Microstrip Line | w = 1.15, h = 0.5, er = 3.4. len = 2.05 |
XMS4 | Microstrip Line | w = 1.15, h = 0.5, er = 3.4. len = 19.76 |
RS, RL | Resistor | 50 |
The goal of this part is to design a distributed MESFET amplifier with a gain of 11dB at f = 4GHz. From the S-parameter data of the MESFET, we know that it is a unilateral transistor, i.e. s12 = 0. Moreover, |s11| < 1 and |s22| < 1. Therefore, the MESFET is unconditionally stable. This reduces the input and output reflection coefficients to:
[math] \Gamma_{in} = s_{11} [/math]
[math] \Gamma_{out} = s_{22} [/math]
The conjugate matching conditions at the input and output of the unilateral transistor reduce to:
[math] \Gamma_S = s_{11}^{\ast} [/math]
[math] \Gamma_L = s_{22}^{\ast} [/math]
Furthermore, you have:
[math] G_0 = |s_{21}|^2 = 6.25 = 8.0dB [/math]
[math] G_{Tmax} = G_S . G_0 . G_L = \frac{1}{1- |s_{11}| ^2} . |S_{21}|^2 . \frac{1}{1- |s_{22}| ^2} = 13.5dB [/math]
To achieve a gain of 11dB, you have 2.5dB more available gain. So you set GS = 2dB and GL = 1dB for a total gain of GT = 2dB + 8dB + 1dB = 11dB. The complex value of ΓS is found on the constant circle GS = 2dB, and the complex value of ΓL is found on the constant circle GL = 1dB, in both cases trying to minimize the distance from the center of the Smith Chart. This requirement yields:
ΓS = 0.33 ∠120°
ΓL = 0.22 ∠70°
For your MESFET amplifier, you will use the same input and output matching network types as in Tutorial Lesson 10, consisting of a 50Ω transmission line segment together with a shunt 50Ω Open Stub.
For this project, you will use a thin lossless dielectric substrate of thickness h = 0.5mm and relative permittivity &epsilonr = 3.4. A 50Ω microstrip line on this substrate has a width of 1.15mm. At the design frequency of f = 4GHz, the guide wavelength of this microstrip line is λg = 45.74mm. The lengths of the microstrip segments are found to be:
Microstrip Component | Z0 | Electrical Length | Physical Width | Physical Length |
---|---|---|---|---|
XMS1 | 50Ω | 0.179λg | 1.15mm | 8.19mm |
XMS2 | 50Ω | 0.100λg | 1.15mm | 4.57mm |
XMS3 | 50Ω | 0.045λg | 1.15mm | 2.05mm |
XMS4 | 50Ω | 0.432λg | 1.15mm | 19.76mm |
Place and connect all the parts as shown in the figure below. For the shunt stubs, connect the microstrip segments XMS2 and XMS4 in a parallel fashion between the source and load resistors and the ground, respectively. Leave the positive pin of XMS2 and XMS4 open.
Run a Network Analysis Test of this circuit according to the table below:
Start Frequency | 3G |
---|---|
Stop Frequency | 5G |
Steps/Interval | 10Meg |
Interval Type | Linear |
Parameter Set | S |
Graph Type | Smith or Cartesian (Amplitude Only) with Decibels checked |
The figure below shows the results for S11, S21, S12 and S22 parameters. Note that since S12 = 0, its dB-scale plot falls at a very large negative number. Therefore, you need to adjust the scale of the vertical axis. Or you can deselect S12 from the graph's legend and zoom to fit. The insertion gain |s21| is almost 11dB as expected from the design. However, the value of the return loss |s11| is only -5dB and certainly not very good. This is due to the fact that you had to deliberately introduce a mismatch in the input and output matching networks to achieve the specified gain of 11dB.
Running an AC Frequency Sweep to Compute Power Gain
Next, connect the AC voltage source and the source and load resistors and place two ammeters at the source and load ammeters in a similar manner as in the last part of Tutorial Lesson 10. The figure below shows the circuit with the source, load and ammeters:
Run an AC Frequency Sweep Test of your amplifier according to the table below:
Start Frequency | 3G |
---|---|
Stop Frequency | 5G |
Steps/Interval | 10Meg |
Interval Type | Linear |
Preset Graph Plots | i(iam1), i(iam2) |
Also define a custom output plot called "Power_Gain" for your amplifier using the same definition: GP = 20*log10(abs(i(am2)/i(am1))).
Start Frequency | 3G |
---|---|
Stop Frequency | 5G |
Steps/Interval | 10Meg |
Interval Type | Linear |
Preset Graph Plots | Custom: Power_Gain |
The figure below shows the graph of power gain vs. frequency. Using the crosshairs you can read the value of the power gain at 4GHz to be 11.148dB, which agrees well with the value of insertion gain calculated in the previous part.